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Determination of beryllium and self-interstitial diffusion parameters in InGaAs

Identifieur interne : 00D784 ( Main/Repository ); précédent : 00D783; suivant : 00D785

Determination of beryllium and self-interstitial diffusion parameters in InGaAs

Auteurs : RBID : Pascal:03-0271097

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Méthode GSMBE, Couche épitaxique, Indium arséniure, Gallium arséniure, Semiconducteur III-V, Dopage, Addition béryllium, Diffusion(transport), Diffusion impureté, Interstitiel, SIMS, Recuit thermique, Dépendance température, Modélisation, 8115H, 6855L, InGaAs:Be, As Ga In.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Beryllium additions, Crystal growth from vapors, Diffusion, Doping, Epitaxial layers, Experimental study, GSMBE method, Gallium arsenides, III-V semiconductors, Impurity scattering, Indium arsenides, Interstitials, Modelling, SIMS, Temperature dependence, Thermal annealing.

Abstract

The diffusion of Be in InGaAs grown by gas source molecular beam epitaxy has been studied. The observed secondary ion mass spectrometry Be profiles, obtained for annealing cycles with a temperature range of 700-900°C, could be explained considering several forms of kick-out mechanism. The beryllium diffusion models in InGaAs have been obtained without a priori hypothesis on interstitial beryllium and self-interstitial. Moreover, the fitting procedure of experimental data has been described precisely. We conclude that two kick-out mechanisms lead to similar fittings of experimental profiles and may not be distinguishable using our experimental conditions.

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Pascal:03-0271097

Le document en format XML

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<author><name sortKey="Marcon, J" uniqKey="Marcon J">J. Marcon</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie Instrumentation, LEMI-IUT-Université de Rouen, IUT de Rouen, UPRES 2654</s1>
<s2>76821 Mont Saint Aignan</s2>
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<settlement type="city">Mont Saint Aignan</settlement>
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<orgName type="university">Université de Rouen</orgName>
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<author><name sortKey="Ihaddadene, M" uniqKey="Ihaddadene M">M. Ihaddadene</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie Instrumentation, LEMI-IUT-Université de Rouen, IUT de Rouen, UPRES 2654</s1>
<s2>76821 Mont Saint Aignan</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Haute-Normandie</region>
<settlement type="city">Mont Saint Aignan</settlement>
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<orgName type="university">Université de Rouen</orgName>
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<author><name sortKey="Ketata, K" uniqKey="Ketata K">K. Ketata</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie Instrumentation, LEMI-IUT-Université de Rouen, IUT de Rouen, UPRES 2654</s1>
<s2>76821 Mont Saint Aignan</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Haute-Normandie</region>
<settlement type="city">Mont Saint Aignan</settlement>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beryllium additions</term>
<term>Crystal growth from vapors</term>
<term>Diffusion</term>
<term>Doping</term>
<term>Epitaxial layers</term>
<term>Experimental study</term>
<term>GSMBE method</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Impurity scattering</term>
<term>Indium arsenides</term>
<term>Interstitials</term>
<term>Modelling</term>
<term>SIMS</term>
<term>Temperature dependence</term>
<term>Thermal annealing</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Méthode GSMBE</term>
<term>Couche épitaxique</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Dopage</term>
<term>Addition béryllium</term>
<term>Diffusion(transport)</term>
<term>Diffusion impureté</term>
<term>Interstitiel</term>
<term>SIMS</term>
<term>Recuit thermique</term>
<term>Dépendance température</term>
<term>Modélisation</term>
<term>8115H</term>
<term>6855L</term>
<term>InGaAs:Be</term>
<term>As Ga In</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
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<front><div type="abstract" xml:lang="en">The diffusion of Be in InGaAs grown by gas source molecular beam epitaxy has been studied. The observed secondary ion mass spectrometry Be profiles, obtained for annealing cycles with a temperature range of 700-900°C, could be explained considering several forms of kick-out mechanism. The beryllium diffusion models in InGaAs have been obtained without a priori hypothesis on interstitial beryllium and self-interstitial. Moreover, the fitting procedure of experimental data has been described precisely. We conclude that two kick-out mechanisms lead to similar fittings of experimental profiles and may not be distinguishable using our experimental conditions.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Determination of beryllium and self-interstitial diffusion parameters in InGaAs</s1>
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<fA11 i1="01" i2="1"><s1>MARCON (J.)</s1>
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<fA11 i1="02" i2="1"><s1>IHADDADENE (M.)</s1>
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<fA11 i1="03" i2="1"><s1>KETATA (K.)</s1>
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<fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie Instrumentation, LEMI-IUT-Université de Rouen, IUT de Rouen, UPRES 2654</s1>
<s2>76821 Mont Saint Aignan</s2>
<s3>FRA</s3>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>The diffusion of Be in InGaAs grown by gas source molecular beam epitaxy has been studied. The observed secondary ion mass spectrometry Be profiles, obtained for annealing cycles with a temperature range of 700-900°C, could be explained considering several forms of kick-out mechanism. The beryllium diffusion models in InGaAs have been obtained without a priori hypothesis on interstitial beryllium and self-interstitial. Moreover, the fitting procedure of experimental data has been described precisely. We conclude that two kick-out mechanisms lead to similar fittings of experimental profiles and may not be distinguishable using our experimental conditions.</s0>
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<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
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<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
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<s5>92</s5>
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Determination of beryllium and self-interstitial diffusion parameters in InGaAs

Determination of beryllium and self-interstitial diffusion parameters in InGaAs

Descripteurs français

English descriptors

Abstract

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